HD-KFM III
HD-KFM III™ represents the cutting edge of Kelvin Probe Force Microscopy (KFM) technology. This advanced module for the Nano-Observer II AFM offers unparalleled sensitivity and resolution in single-pass mode, revolutionising surface potential measurements at the nanoscale.
Manufacturer
CSI
CSInstruments is a French scientific equipment manufacturer specialised in the conception of Atomic Force Microscope and options designed for existing AFM (Nano-Observer AFM, Resiscope™, High Voltage Amplifier, Magnetic modules). The product range proposed by CSInstruments is designed and manufactured to help the scientific community to achieve nanometre performances that meet the research needs and requirements for actual and future nanoscience applications.
CSInstruments was founded by a team of experts working in AFM field for more than 20 years, starting as pioneer with some historical manufacturers. CSInstruments activity is also based on a qualified and dynamic team, experienced in the fields of mechanics, electronics and data processing. This expertise ensures innovation and performance in the production of AFM and achieves an excellent price/performance ratio!
Key Features
- Improved accuracy and significantly reduced background noise compared to previous versions
- Ability to perform simultaneous MFM (Magnetic Force Microscopy) and HD-KFM measurements, allowing researchers to correlate magnetic and electrical properties in a single scan
- Includes dC/dZ functionality, making it particularly valuable for dielectric measurements and characterisation of insulating materials
- Features an MFM with EFC (Electrical Field Compensation) option, which helps eliminate electrical interference during magnetic measurements
Advanced Features of HD-KFM III
dC/dZ Measurements:
dC/dZ measures the change in capacitance with respect to the tip-sample distance, providing information about local dielectric properties.
Benefits: Enables mapping of dielectric constants and investigation of thin film properties at the nanoscale.
EFC (Electrical Field Compensation for MFM):
EFC nullifies the electrostatic interaction between the tip and sample during Magnetic Force Microscopy measurements.
Benefits: Allows for pure magnetic measurements without electrostatic interference, crucial for accurate characterisation of magnetic nanostructures.
HD-KFM: Nanotubes embedded on a polymer
Principle of HD-KFM III
Bimodal Dual Frequency Excitation
Topography Frequency:
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The first flexural mode of the cantilever is excited mechanically.
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This frequency is used to measure and control the sample topography.
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Allows for precise tracking of surface features without interference
Surface Potential Frequency:
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The second flexural mode of the cantilever is excited electrically.
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This separate frequency is dedicated to measuring surface potential.
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Enables simultaneous, independent measurement of topography and surface
Signal Amplification:
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The use of the second eigenmode for electrical excitation inherently amplifies the signal.
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This amplification occurs even with very small applied AC voltages.
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Results in improved signal-to-noise ratio and higher sensitivity to small potential differences.
Enhanced Signal Amplification:
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The VAC bias is fine-tuned to the second eigenmode of the cantilever.
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This tuning amplifies the signal by the Q factor of the second mode.
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The Q factor amplification can be significant, often 100 times or more, greatly enhancing sensitivity.
Improved Stability:
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The second eigenmode has a stiffer effective spring constant compared to the fundamental mode.
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This increased stiffness provides more stable oscillation during surface scanning.
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Stability translates to more reliable and consistent measurements, especially on challenging samples.
Automated Frequency Optimisation:
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The Vac bias is fine-tuned to the Second eigenmode automatically by the software without user intervention.
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Patented algorithm selects the best frequency position around the resonance peak.
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Achieves better resolution and sensitivity through optimised frequency selection.
Single-Pass Operation
Single-pass operation in HD-KFM III represents a significant advancement over traditional Kelvin Probe Force Microscopy techniques:
Elimination of Lift Scans:
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Traditional KFM requires two passes: one for topography and another lifted pass for potential measurement.
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HD-KFM III combines both measurements in a single pass, saving time and reducing potential errors.
Proximity to Surface:
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The tip operates at a typical minimum distance of 0.1-0.5 nm from the sample surface.
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This close proximity allows for much stronger interaction with the sample's electrostatic field.
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Compared to standard KFM (10-100 nm lift height), HD-KFM III probes an electrostatic field 100-10,000 times stronger.
Enhanced Resolution and Sensitivity:
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Closer proximity leads to significant improvements in lateral resolution.
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Sensitivity is greatly enhanced, allowing for detection of subtle variations in surface potential.
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Enables clear differentiation between features like single and multiple layers of 2D materials.
Technical Specifications
| Operating Mode | Single-pass |
| Tip-Sample Distance | 0.1 - 0.5 nm (typical) |
| Excitation Modes | Dual-frequency (Bimodal) |
| Topography Measurement | First flexural mode frequency (mechanical excitation) |
| Surface Potential Measurement | Second flexural mode frequency (electrical excitation) |
| Signal Amplification | Q factor enhancement in the second eigenmode |
| VAC Bias | Optimised for second eigenmode, enabling lower voltage applications |
| Feedback System | Dual feedback control (topography and electrical signals) |
| AFM Compatibility | Nano-Observer II |
| Advanced Features | Dc/Dz Measurements, Electrical Field Compensation (EFC) for MFM, Lift Mode |
| Application Areas | Materials Science, Semiconductors, 2D Materials, Polymers, Life Sciences |
| Lateral Resolution | Superior to standard KFM (exact value not specified) |
| Sensitivity | Increased through minimised tip-sample distance and enhanced signal amplification |
| Electrostatic Field Strength | 100x to 10,000x stronger than standard KFM |
Industries
- Materials Science
- Life Sciences
- Semiconductors and Electronics
- Academics
- Others (includes solar cells, geoscience, forensic science, and food technology)
Applications
Materials Science
Surface potential mapping, work function measurements, defect detection, thin film analysis
Semiconductors
Doping profiling, device characterisation, failure analysis, nanoscale electronics
2D Materials
Layer identification, electronic property mapping, substrate interaction studies, defect analysis
Polymers
Charge distribution mapping, blend differentiation, aging studies, nanoscale polymer electronics
Life Sciences
Biomaterial characterisation, cell membrane charge mapping, protein/DNA charge analysis, bioelectronics
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